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| Ordering number : ENN7910 2SK3101LS N-Channel Silicon MOSFET 2SK3101LS Features * * * * General-Purpose Switching Device Applications Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Enargy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings 400 30 11 44 2.0 40 150 --55 to +150 69.1 11 Unit V V A A W W C C mJ A *1 VDD=50V, L=1mH, IAV=11A *2 L1mH, single pulse Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on) Conditions ID=1mA, VGS=0 VDS=320V, VGS=0 VGS= 30V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=8A ID=8A, VGS=15V Ratings min 400 1.0 100 3.0 4.0 8.0 0.32 0.4 4.0 typ max Unit V mA nA V S Marking : K3101 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 81004 TS IM TB-00000033 No.7910-1/5 2SK3101LS Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=200V, VGS=10V, ID=11A IS=11A, VGS=0 Ratings min typ 1850 480 240 19 35 140 41 58 0.9 1.2 max Unit pF pF pF ns ns ns ns nC V Package Dimensions unit : mm 2078C 10.0 3.2 4.5 2.8 3.5 7.2 16.1 16.0 3.6 0.9 1.2 1.2 0.75 123 14.0 0.7 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) 2.55 2.55 Switching Time Test Circuit VDD=200V 2.4 0.6 Unclamped Inductive Test Circuit L 50 VGS=15V ID=8A RL=25 VOUT DUT D PW=1s D.C.0.5% 10V 0V 50 VDD G P.G RGS 50 2SK3101LS S No.7910-2/5 2SK3101LS 25 ID -- VDS 10V 30 ID -- VGS VDS=10V Tc= --25C 20 15V 8V 25 25C Drain Current, ID -- A Drain Current, ID -- A 20 15 75C 15 7V 10 10 5 VGS=6V 5 0 0 1 2 3 4 5 6 7 8 9 10 0 0 5 10 15 20 IT06562 Drain-to-Source Voltage, VDS -- V 1.0 0.9 0.8 0.7 0.6 0.5 IT06561 1.2 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V RDS(on) -- Tc Tc=25C Static Drain-to-Source On-State Resistance, RDS(on) -- Static Drain-to-Source On-State Resistance, RDS(on) -- 1.0 0.8 0.6 8A 0.4 0.3 0.2 4 6 8 0.4 ID=16A 1A 10 12 14 16 18 20 V =10 V GS 8A, 15V I D= S= , VG 8A I D= 0.2 0 --50 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V 2 yfs -- ID 25C IT06563 7 Case Temperature, Tc -- C IT06564 VGS(off) -- Tc VDS=10V ID=1mA Forward Transfer Admittance, yfs -- S VDS=10V 10 7 5 3 2 1.0 7 5 3 2 0.1 0.1 6 Cutoff Voltage, VGS(off) -- V 3 5 7 2 3 C -25 =- C Tc 75 5 4 3 2 1 0 --100 2 3 5 7 1.0 2 10 --50 0 50 100 150 200 IT06566 Drain Current, ID -- A 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IT06565 1000 7 5 Case Temperature, Tc -- C IF -- VSD SW Time -- ID VDD=200V VGS=15V td (off) VGS=0V Switching Time, SW Time -- ns Forward Current, IF -- A 3 2 100 7 5 3 2 10 7 5 0.1 tf 5C td(on) tr 25C 0.6 0.01 7 5 3 2 0.001 0.2 0.4 Tc= 7 --25C 0.8 1.0 1.2 IT06567 2 3 5 7 1.0 2 3 5 7 10 2 3 Diode Forward Voltage, VSD -- V Drain Current, ID -- A IT07364 No.7910-3/5 2SK3101LS 10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 10 0 5 10 15 20 25 30 IT06568 2.5 0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 Ciss, Coss, Crss -- VDS f=1MHz 12 VGS -- Qg VDS=200V ID=11A Gate-to-Source Voltage, VGS -- V Ciss 10 Ciss, Coss, Crss -- pF Coss 8 Crss 6 4 2 Drain-to-Source Voltage, VDS -- V 100 7 5 3 2 Total Gate Charge, Qg -- nC IT06569 ASO Allowable Power Dissipation, PD -- W IDP=44A ID=11A <1s 10 s 100 s PD -- Ta 2.0 Drain Current, ID -- A 10 7 5 3 2 1.0 5 3 3 2 0.1 7 5 3 2 0.01 1m s 10m DC 100 s ope ms rat ion Operation in this area is limited by RDS(on). 1.5 1.0 0.5 Tc=25C Single pulse 2 3 5 7 10 2 3 5 7 100 2 3 5 0 0 20 40 60 80 100 120 140 160 IT06570 1.0 Drain-to-Source Voltage, VDS -- V 45 Ambient Temperature, Ta -- C IT06572 PD -- Tc Allowable Power Dissipation, PD -- W 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc -- C IT06571 No.7910-4/5 2SK3101LS Note on usage : Be careful in handling the 2SK3101LS because it has no protection diode between gate and source. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2004. Specifications and information herein are subject to change without notice. PS No.7910-5/5 |
Price & Availability of 2SK3101
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